PART |
Description |
Maker |
GS88136BD-200I GS88136BD-133I GS88136BD-150 GS8813 |
200MHz 6.5ns 256K x 36 9Mb sync burst SRAM 133MHz 8.5ns 256K x 36 9Mb sync burst SRAM 150MHz 7.5ns 256K x 36 9Mb sync burst SRAM 166MHz 7ns 256K x 36 9Mb sync burst SRAM
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GSI Technology
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GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc. http://
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IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
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GS8161E36BD-150IV GS8161E36BT-150IV GS8161E18BGT-2 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS881E18BT-300 GS881E32BGT-200I GS881E32BGD-333I G |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 4.5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T |
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc. http://
|
GS816018BGT-150I GS816018BGT-250 GS816018BGT-250I |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- |
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏,10纳秒,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?) SSRAM Modules
|
Bourns, Inc. Electronic Theatre Controls, Inc.
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EDI2AG272129V9D1 EDI2AG272129V10D1 EDI2AG272129V12 |
2x128Kx72, 3.3V,9ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块) 2x128Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 2x128Kx72, 3.3V,12ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块) 2x128Kx72,, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块)
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White Electronic Designs Corporation
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